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Ordering number : ENN8356
2SC6020
2SC6020
Applications
*
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
* * * * * *
Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 40 30 6 6 9 600 0.8 15 150 --55 to +150 Unit V V V A A mA W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA VCE=10V, IC=500mA Ratings min typ max 0.1 0.1 250 420 400 MHz Unit A A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005EA MS IM TB-00001435 No.8356-1/4
2SC6020
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=1.5A, IB=30mA IC=2.5A, IB=50mA IC=2.5A, IB=50mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 40 30 6 30 300 15 Ratings min typ 20 105 130 0.85 160 195 1.2 max Unit pF mV mV V V V V ns ns ns
Package Dimensions unit : mm 7518-003
6.5 5.0 2.3
1.5
Package Dimensions unit : mm 7003-003
0.5
6.5 5.0 2.3
4
4
7.0
1.5
0.5
5.5
5.5
7.0
0.8 1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2 1.2
0.6
2.5
0.85 0.7
0.85
0.5
1.2
1
2
3
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
2.3
2.3
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR 50 IB1 IB2 RB OUTPUT
RL + + 470F VCC=12V
100F VBE= --5V
IC=20IB1= --20IB2=2.5A
6
IC -- VCE
100mA 80mA 0mA 60mA
40mA 30mA 20mA
7
IC -- VBE
VCE=2V
5
6
Collector Current, IC -- A
5
4
Collector Current, IC -- A
5
4
3
2
1
1
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IB=0mA
0.8 0.9 1.0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Collector-to-Emitter Voltage, VCE -- V
IT09447
Base-to-Emitter Voltage, VBE -- V
Ta= 7
5mA
2
--25C
IT09448
10mA
3
5C 25C
No.8356-2/4
2SC6020
7 5
hFE -- IC
VCE=2V Gain-Bandwidth Product, f T -- MHz
1000 7 5
f T -- IC
VCE=10V
DC Current Gain, hFE
Ta=75C
3
25C
3 2
2
--25C
100 7 5
100 7 5 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
100
5 7 10 IT09449
3 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
5
5 7 10 IT09450
VCE(sat) -- IC
f=1MHz Output Capacitance, Cob -- pF
7
IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
5
0.1 7 5 3 2
3
= Ta
C 75
2
2
0.01 7
--2 C 5
C 5
10 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
5 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector-to-Base Voltage, VCB -- V
1.0 7
IT09451 3
Collector Current, IC -- A
5 7 10 IT09452
VCE(sat) -- IC
IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
IC / IB=50
2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
1.0
Ta= --25C
75C
0.1 7 5 3 2
7 5
= Ta
C 75
--2
C 5
25C
C 25
3 2 0.01
0.01 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
2 10 7 5
5 7 10 IT09453
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
0.9
5 7 10 IT09454
ASO
PC -- Ta
ICP=9A IC=6A
10ms
DC operation (Tc=25C)
DC op
1ms
10s
0.8
Collector Dissipation, PC -- W
0 10
0 s 50
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
10
0m
s
s
er
ati
No
on
he
(T a=
at
sin
25 C
k
)
0.01 0.01
Tc=25C Single pulse
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT09455
Ambient Temperature, Ta -- C
IT09456
No.8356-3/4
2SC6020
16 15 14
PC -- Tc
Collector Dissipation, PC -- W
12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT09457
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8356-4/4

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